We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V. © 2011 IEEE.
All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect
Casalino M;Sirleto L;Iodice M;Rendina I;Coppola;
2011
Abstract
We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V. © 2011 IEEE.File in questo prodotto:
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