Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P(out)=1.5 W/mm) and high frequency (and f(MAX)=35 GHz) performances have been obtained.
K-band Diamond MESFETs for RFIC technology
E Giovine;
2009
Abstract
Diamond is one of the suitable semi-conductor for vacuum electronics replacement in high power and high frequency applications. Sub-micron gate-length (200 nm) Metal Semiconductor Field Effect Transistor (MESFETs) have been fabricated on h-terminated polycrystalline diamond and characterized in order to investigate the possibility of RFICs integration. High power (P(out)=1.5 W/mm) and high frequency (and f(MAX)=35 GHz) performances have been obtained.File in questo prodotto:
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