ABSTRACT ABSTRACT- P+ self-annnealing implantations through evaporated Ti is performed to simultaneously form the silicide and the junction underneath, avoiding the need for further post-implantation thermal treatments. The formation of the TiSi2, phase and the good quality of the silicon-silicide interface are observed, when operating at power densities <= 16 W/cm2. Deep phosphorus distributions extending below the silicide down to 480÷600 nm are obtained.
A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation
Lulli;Nipoti;
1985
Abstract
ABSTRACT ABSTRACT- P+ self-annnealing implantations through evaporated Ti is performed to simultaneously form the silicide and the junction underneath, avoiding the need for further post-implantation thermal treatments. The formation of the TiSi2, phase and the good quality of the silicon-silicide interface are observed, when operating at power densities <= 16 W/cm2. Deep phosphorus distributions extending below the silicide down to 480÷600 nm are obtained.File in questo prodotto:
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