n this paper we report on the hydrogénation of GaAs which takes place when MBE growth is performed in the presence of atomic hydrogen. In Sn-doped GaAs (Nd-Na< lO'^ cm-3) grown under this condition, we observe: 1) a significant decrease of both shallow donor and acceptor concentrations and 2) the reduction of Ml, M3, and M4 deep level densities. By comparing our results with those obtained by post-growth hydrogénation processes, such as exposure to hydrogen plasma and low-energy hydrogen implantation, it can be concluded that the effects 1) and 2) can be ascribed to the interactio of defects with atomic hydrogen incorporated during the growth
Hydrogenation of GaAs during MBE Growth
S Franchi;E Gombia;R Mosca;
1989
Abstract
n this paper we report on the hydrogénation of GaAs which takes place when MBE growth is performed in the presence of atomic hydrogen. In Sn-doped GaAs (Nd-Na< lO'^ cm-3) grown under this condition, we observe: 1) a significant decrease of both shallow donor and acceptor concentrations and 2) the reduction of Ml, M3, and M4 deep level densities. By comparing our results with those obtained by post-growth hydrogénation processes, such as exposure to hydrogen plasma and low-energy hydrogen implantation, it can be concluded that the effects 1) and 2) can be ascribed to the interactio of defects with atomic hydrogen incorporated during the growthI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
