Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is nor present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering. (C) 1999 American Institute of Physics. [S0003-6951(99)02404-3].
Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering
Franchi S;Frigeri P
1999
Abstract
Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is nor present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering. (C) 1999 American Institute of Physics. [S0003-6951(99)02404-3].File in questo prodotto:
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