beta-SiC nanowires were synthesized on different monocrystalline substrates: Si (001), Si (111), 3C-SiC (001), 4H-SiC (0001), 6H-SiC (0001). The SIC nanowire growth was carried out using a Chemical Vapor Deposition method, with silane and propane diluted in hydrogen (3%) as precursors. The deposition was performed at atmospheric pressure and at 1100 degrees C, after dewetting of the Ni catalyst, which had been previously evaporated onto the substrate, to induce 1D growth according to a VLS process. The crystal structure of the nanowires, as determined by X-ray diffraction and High Resolution Transmission Electron Microscopy, corresponds to 3C-SiC polytype growing along a < 111 > direction, irrespective of the substrate. The occurrence of (111) stacking faults was observed, partly reduced for samples grown on 3C-SiC substrate. The growth on (111) substrate allowed to achieve a good vertical alignment of the nanowires, as investigated by Scanning Electron Microscopy. High Angle Annular Dark Field imaging and Energy Dispersive X-Ray spectroscopy were performed to study the catalyst particle on top of the wires and showed the formation of a nickel-silicon alloy.
The effect of substrate type on SiC nanowire orientation
Giovanni Attolini;Francesca Rossi;Matteo Bosi;Bernard Enrico Watts;Giancarlo Salviati
2011
Abstract
beta-SiC nanowires were synthesized on different monocrystalline substrates: Si (001), Si (111), 3C-SiC (001), 4H-SiC (0001), 6H-SiC (0001). The SIC nanowire growth was carried out using a Chemical Vapor Deposition method, with silane and propane diluted in hydrogen (3%) as precursors. The deposition was performed at atmospheric pressure and at 1100 degrees C, after dewetting of the Ni catalyst, which had been previously evaporated onto the substrate, to induce 1D growth according to a VLS process. The crystal structure of the nanowires, as determined by X-ray diffraction and High Resolution Transmission Electron Microscopy, corresponds to 3C-SiC polytype growing along a < 111 > direction, irrespective of the substrate. The occurrence of (111) stacking faults was observed, partly reduced for samples grown on 3C-SiC substrate. The growth on (111) substrate allowed to achieve a good vertical alignment of the nanowires, as investigated by Scanning Electron Microscopy. High Angle Annular Dark Field imaging and Energy Dispersive X-Ray spectroscopy were performed to study the catalyst particle on top of the wires and showed the formation of a nickel-silicon alloy.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
