BOSI, MATTEO
BOSI, MATTEO
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption
2024 Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R.
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments
2024 Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R.
Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics
2024 Golovynskyi, S.; Datsenko, O. I.; Perez-Jimenez, A. I.; Kuklin, A.; Chaigneau, M.; Golovynskyi, A.; Golovynska, I.; Bosi, M.; Seravalli, L.
Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors
2024 Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca
Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)
2024 Tsai, Y.; Hashimoto, Y.; Sun, Z.; Moriki, T.; Tadamura, T.; Nagata, T.; Mazzolini, P.; Parisini, A.; Bosi, M.; Seravalli, L.; Matsushita, T.; Yamashita, Y.
Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films
2024 Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo
Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates
2024 Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R,
Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study
2023 Zolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R.
Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition
2023 Seravalli, Luca; Esposito, Fiorenza; Bosi, Matteo; Aversa, Lucrezia; Trevisi, Giovanna; Verucchi, Roberto; Lazzarini, Laura; Rossi, Francesca; Fabbri, Filippo
Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires
2023 Frigeri, P.; Gombia, E.; Bosi, M.; Trevisi, G.; Seravalli, L.; Ferrari, C.
Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations
2023 Golovynskyi, S.; Datsenko, O. I.; Usman, M.; Perez-Jimenez, A. I.; Chaigneau, M.; Bosi, M.; Seravalli, L.; Hidouri, T.; Golovynska, I.; Li, B.; Wu, H.
Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation)
2023 Parisini, Antonella; Mazzolini, Piero; Bosi, Matteo; Seravalli, Luca; Bosio, Alessio; Fornari, Roberto
Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3
2023 Rajabi Kalvani, P.; Parisini, A.; Sozzi, G.; Borelli, C.; Mazzolini, P.; Bierwagen, O.; Vantaggio, S.; Egbo, K.; Bosi, M.; Seravalli, L.; Fornari, R.
Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors
2023 Girolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, DANIELE MARIA; Fornari, Roberto
Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition
2023 Esposito, F; Bosi, M; Attolini, G; Rossi, F; Panasci, SALVATORE ETHAN; Fiorenza, P; Giannazzo, F; Fabbri, F; Seravalli, L
Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction
2023 Mazzolini, P.; Fogarassy, Z.; Parisini, A.; Mezzadri, F.; Diercks, D.; Bosi, M.; Seravalli, L.; Sacchi, A.; Spaggiari, G.; Bersani, D.; Bierwagen, O.; Janzen, B. M.; Marggraf, M. N.; Wagner, M. R.; Cora, I.; Pecz, B.; Tahraoui, A.; Bosio, A.; Borelli, C.; Leone, S.; Fornari, R.
SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration
2023 Ghezzi, B.; Attolini, G.; Bosi, M.; Negri, M.; Lagonegro, P.; Rotonda, P. M.; Cornelissen, C.; Macaluso, G. M.; Lumetti, S.
Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD
2023 Datsenko, O. I.; Golovynskyi, S.; Perez-Jimenez, A. I.; Chaigneau, M.; Golovynskyi, A.; Golovynska, I.; Shevchenko, V.; Bosi, M.; Seravalli, L.
Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes
2022 Ferrari C.; Attolini G.; Bosi M.; Frigeri C.; Frigei P.; Gombia E.; Lazzarini L.; Rossi F.; Seravalli L.; Trevisi G.; Lolli R.; Aversa L.; Verucchi R.; Musayeva N.; Alizade M.; Quluzade S.; Oruyov T.; Sansone F.; Baldini L.; Rispoli F.
Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study
2022 Romaniuk Yurii A.; Golovynskyi S.; Litvinchuk A.P.; Dong D.; Lin Y.; Datsenko O.I.; Bosi M.; Seravalli L.; Babichuk I.S.; Yukhymchuk, V.O.; Li B.; Qu J.
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Electronic states near surfaces and interfaces of β-Ga2O3 and κ-Ga2O3 epilayers investigated by surface photovoltage spectroscopy, photoconductivity and optical absorption | 1-gen-2024 | Dittrich, T.; Parisini, A.; Pavesi, M.; Baraldi, A.; Sacchi, A.; Mezzadri, F.; Mazzolini, P.; Bosi, M.; Seravalli, L.; Bosio, A.; Fornari, R. | |
| Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments | 1-gen-2024 | Mazzolini, P.; Varley, J. B.; Parisini, A.; Sacchi, A.; Pavesi, M.; Bosio, A.; Bosi, M.; Seravalli, L.; Janzen, B. M.; Marggraf, M. N.; Bernhardt, N.; Wagner, M. R.; Ardenghi, A.; Bierwagen, O.; Falkenstein, A.; Kler, J.; De Souza, R. A.; Martin, M.; Mezzadri, F.; Borelli, C.; Fornari, R. | |
| Exciton and Trion at the Perimeter and Grain Boundary of CVD-Grown Monolayer MoS2: Strain Effects Influencing Application in Nano-Optoelectronics | 1-gen-2024 | Golovynskyi, S.; Datsenko, O. I.; Perez-Jimenez, A. I.; Kuklin, A.; Chaigneau, M.; Golovynskyi, A.; Golovynska, I.; Bosi, M.; Seravalli, L. | |
| Influence of the Carrier Gas Flow in the CVD Synthesis of 2-Dimensional MoS2 Based on the Spin-Coating of Liquid Molybdenum Precursors | 1-gen-2024 | Esposito, Fiorenza; Bosi, Matteo; Attolini, Giovanni; Rossi, Francesca; Fornari, Roberto; Fabbri, Filippo; Seravalli, Luca | |
| Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001) | 1-gen-2024 | Tsai, Y.; Hashimoto, Y.; Sun, Z.; Moriki, T.; Tadamura, T.; Nagata, T.; Mazzolini, P.; Parisini, A.; Bosi, M.; Seravalli, L.; Matsushita, T.; Yamashita, Y. | |
| Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films | 1-gen-2024 | Spaggiari, Giulia; Fornari, Roberto; Mazzolini, Piero; Mezzadri, Francesco; Parisini, Antonella; Bosi, Matteo; Seravalli, Luca; Pattini, Francesco; Pavesi, Maura; Baraldi, Andrea; Rampino, Stefano; Sacchi, Anna; Bersani, Danilo | |
| Structural and Photoelectronic Properties of k-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates | 1-gen-2024 | Girolami, M; Bosi, M; Pettinato, S; Ferrari, C; Lolli, R; Seravalli, L; Serpente, V; Mastellone, M; Trucchi, DANIELE MARIA; D, M; Fornari, Roberto; R, | |
| Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study | 1-gen-2023 | Zolnai, Z.; Petrik, P.; Nemeth, A.; Volk, J.; Bosi, M.; Seravalli, L.; Fornari, R. | |
| Built-in tensile strain dependence on lateral size of monolayer MoS 2 synthetized using liquid precursor chemical vapor deposition | 1-gen-2023 | Seravalli, Luca; Esposito, Fiorenza; Bosi, Matteo; Aversa, Lucrezia; Trevisi, Giovanna; Verucchi, Roberto; Lazzarini, Laura; Rossi, Francesca; Fabbri, Filippo | |
| Electrical properties and chemiresistive response to 2,4,6 trinitrotoluene vapours of large area arrays of Ge nanowires | 1-gen-2023 | Frigeri, P.; Gombia, E.; Bosi, M.; Trevisi, G.; Seravalli, L.; Ferrari, C. | |
| Free exciton and bound excitons on Pb and I vacancies and O and I substituting defects in PbI2: Photoluminescence and DFT calculations | 1-gen-2023 | Golovynskyi, S.; Datsenko, O. I.; Usman, M.; Perez-Jimenez, A. I.; Chaigneau, M.; Bosi, M.; Seravalli, L.; Hidouri, T.; Golovynska, I.; Li, B.; Wu, H. | |
| Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation) | 1-gen-2023 | Parisini, Antonella; Mazzolini, Piero; Bosi, Matteo; Seravalli, Luca; Bosio, Alessio; Fornari, Roberto | |
| Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3 | 1-gen-2023 | Rajabi Kalvani, P.; Parisini, A.; Sozzi, G.; Borelli, C.; Mazzolini, P.; Bierwagen, O.; Vantaggio, S.; Egbo, K.; Bosi, M.; Seravalli, L.; Fornari, R. | |
| Orthorhombic undoped k-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors | 1-gen-2023 | Girolami, Marco; Bosi, Matteo; Serpente, Valerio; Mastellone, Matteo; Seravalli, Luca; Pettinato, Sara; Salvatori, Stefano; Trucchi, DANIELE MARIA; Fornari, Roberto | |
| Role of density gradients in the growth dynamics of 2-dimensional MoS2 using liquid phase molybdenum precursor in chemical vapor deposition | 1-gen-2023 | Esposito, F; Bosi, M; Attolini, G; Rossi, F; Panasci, SALVATORE ETHAN; Fiorenza, P; Giannazzo, F; Fabbri, F; Seravalli, L | |
| Silane-Mediated Expansion of Domains in Si-Doped κ-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction | 1-gen-2023 | Mazzolini, P.; Fogarassy, Z.; Parisini, A.; Mezzadri, F.; Diercks, D.; Bosi, M.; Seravalli, L.; Sacchi, A.; Spaggiari, G.; Bersani, D.; Bierwagen, O.; Janzen, B. M.; Marggraf, M. N.; Wagner, M. R.; Cora, I.; Pecz, B.; Tahraoui, A.; Bosio, A.; Borelli, C.; Leone, S.; Fornari, R. | |
| SiO2/SiC Nanowire Surfaces as a Candidate Biomaterial for Bone Regeneration | 1-gen-2023 | Ghezzi, B.; Attolini, G.; Bosi, M.; Negri, M.; Lagonegro, P.; Rotonda, P. M.; Cornelissen, C.; Macaluso, G. M.; Lumetti, S. | |
| Tensile strain creates trion: Excitonic photoluminescence distribution over bilayer MoS2 grown by CVD | 1-gen-2023 | Datsenko, O. I.; Golovynskyi, S.; Perez-Jimenez, A. I.; Chaigneau, M.; Golovynskyi, A.; Golovynska, I.; Shevchenko, V.; Bosi, M.; Seravalli, L. | |
| Detection of Nitroaromatic Explosives in Air by Amino-Functionalized Carbon Nanotubes | 1-gen-2022 | Ferrari C.; Attolini G.; Bosi M.; Frigeri C.; Frigei P.; Gombia E.; Lazzarini L.; Rossi F.; Seravalli L.; Trevisi G.; Lolli R.; Aversa L.; Verucchi R.; Musayeva N.; Alizade M.; Quluzade S.; Oruyov T.; Sansone F.; Baldini L.; Rispoli F. | |
| Influence of anharmonicity and interlayer interaction on Raman spectra in mono- and few-layer MoS2: A computational study | 1-gen-2022 | Romaniuk Yurii A.; Golovynskyi S.; Litvinchuk A.P.; Dong D.; Lin Y.; Datsenko O.I.; Bosi M.; Seravalli L.; Babichuk I.S.; Yukhymchuk, V.O.; Li B.; Qu J. |