La0.65Sr0.35MnO3-d (LSMO) films (d= 0, 0.07, 0.12) were studied by hard x-ray photoelectron spectroscopy. It is found that the Mn 3d valence band states shift to higher binding energies for oxygen-deficient samples, while their overall width decreases as a result of the reduced density of charge carriers. The concurrent disappearance of the well-screened state at the Mn 2p level indicates a decrease in hybridization of the Mn 3d and the doping-induced states. The lack of clear band gap formation for oxygen-deficient LSMO above the metal/insulator transition is compatible not with polaron formation but, rather, with a Mott variable range hopping mechanism, which is also supported by our transport data. The large electron probing depth of hard x-ray photoelectron spectroscopy is crucial for this study because modifications to the electronic structure may occur in the near-surface region.

Evidence of electronic band redistribution in La0.65Sr0.35MnO3-? by hard x-ray photoelectron spectroscopy

P Orgiani;B A Davidson;C Aruta
2012

Abstract

La0.65Sr0.35MnO3-d (LSMO) films (d= 0, 0.07, 0.12) were studied by hard x-ray photoelectron spectroscopy. It is found that the Mn 3d valence band states shift to higher binding energies for oxygen-deficient samples, while their overall width decreases as a result of the reduced density of charge carriers. The concurrent disappearance of the well-screened state at the Mn 2p level indicates a decrease in hybridization of the Mn 3d and the doping-induced states. The lack of clear band gap formation for oxygen-deficient LSMO above the metal/insulator transition is compatible not with polaron formation but, rather, with a Mott variable range hopping mechanism, which is also supported by our transport data. The large electron probing depth of hard x-ray photoelectron spectroscopy is crucial for this study because modifications to the electronic structure may occur in the near-surface region.
2012
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Istituto Superconduttori, materiali innovativi e dispositivi - SPIN
Istituto Officina dei Materiali - IOM -
Manganites; HAXPES; thin films;
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/234037
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