Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1±0.1 and 2.6±0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O3 interface is 2.4±0.1 eV. The value of the Lu2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8±0.1 eV. Optical absorption spectroscopy gave a value of 4.89±0.02 eV for the Lu2O3 optical band gap.
Energy-band diagram of metal/Lu2O3/silicon structures
G Seguini;S Spiga;G Scarel;M Fanciulli
2004
Abstract
Internal photoemission spectroscopy has been used to determine the band alignment in Lu2O3 based metal-oxide-semiconductor structures. The Si/Lu2O3 interface conduction- and valence-band offsets were determined to be 2.1±0.1 and 2.6±0.1 eV, respectively. The energy barrier for electrons at the Al/Lu2O3 interface is 2.4±0.1 eV. The value of the Lu2O3 transport band gap, obtained by photoconductivity measurements, was found to be 5.8±0.1 eV. Optical absorption spectroscopy gave a value of 4.89±0.02 eV for the Lu2O3 optical band gap.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
