Extended X-ray absorption fine structure in the glancing angle geometry has been used to study the strain accommodation in quantum well structures of InxGa1-xAs/GaAs (x < 0.25). The results show that a number of Ga-As bond lengths are stretched. Indeed, two Ga-As bonds distances coexist: 2.45 +/- 0.01 angstrom and 2.64 +/- 0.02 angstrom, which correspond to the Ga-As and In-As bond distances in the binary compounds GaAs and InAs, respectively. This result is independent of the In molar fraction in the strained alloy layers.
Microscopic investigation of the strain distribution in InGaAs/GaAs quantum well structures grown by molecular beam epitaxy
F Martelli;S Turchini;L Alagna;MR Bruni;T Prosperi;
1993
Abstract
Extended X-ray absorption fine structure in the glancing angle geometry has been used to study the strain accommodation in quantum well structures of InxGa1-xAs/GaAs (x < 0.25). The results show that a number of Ga-As bond lengths are stretched. Indeed, two Ga-As bonds distances coexist: 2.45 +/- 0.01 angstrom and 2.64 +/- 0.02 angstrom, which correspond to the Ga-As and In-As bond distances in the binary compounds GaAs and InAs, respectively. This result is independent of the In molar fraction in the strained alloy layers.File in questo prodotto:
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