In this work we report the enhancement of the 3C-SiC band edge luminescence induced by the SiO2 shell in a SiC/SiO2 core/shell nanowires (NWs) system. We demonstrate that the shell enhances the SiC near band edge luminescence and we argue the formation of a type-I quantum well between the SiC core and the SiO2 shell, with the consequent injection of carriers from the larger band-gap shell to the narrower band-gap core.

Emission enhancement of SiC/SiO2 core/shell nanowires induced by the oxide shell

Fabbri Filippo;Rossi Francesca;Attolini Giovanni;Bosi Matteo;Salviati Giancarlo;Iannotta Salvatore;Aversa Lucrezia;Verucchi Roberto;Nardi Marco;
2012

Abstract

In this work we report the enhancement of the 3C-SiC band edge luminescence induced by the SiO2 shell in a SiC/SiO2 core/shell nanowires (NWs) system. We demonstrate that the shell enhances the SiC near band edge luminescence and we argue the formation of a type-I quantum well between the SiC core and the SiO2 shell, with the consequent injection of carriers from the larger band-gap shell to the narrower band-gap core.
2012
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
silicon carbide
Characterization
Emission
Nanostructure
Nanowire
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/236099
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