By using a single layer of SiN(x)O(y) as gate insulator in a Pd-MISFET device, a hydrogen sensor is obtained having high sensitivity (100 mV/dec at 50-degrees-C) and high stability (less than 3 mV/day). The device is mounted on a probe designed for monitoring the hydrogen permeation of pipe-line and vessel materials operating in sour environments. It is shown that it is possible, for example, to control the resistance of anti-corrosion coatings by using this probe.
A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY
SEVERI M;SOLMI S;MACCAGNANI P
1991
Abstract
By using a single layer of SiN(x)O(y) as gate insulator in a Pd-MISFET device, a hydrogen sensor is obtained having high sensitivity (100 mV/dec at 50-degrees-C) and high stability (less than 3 mV/day). The device is mounted on a probe designed for monitoring the hydrogen permeation of pipe-line and vessel materials operating in sour environments. It is shown that it is possible, for example, to control the resistance of anti-corrosion coatings by using this probe.File in questo prodotto:
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Descrizione: A NOVEL PD-SINXOY HYDROGEN SENSOR OF HIGH-STABILITY AND SENSITIVITY
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