In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 ?m, are reported.
Fabrication and characterization of resonant cavity enhanced silicon photodetectors at 1.55 ?m
Casalino M;Sirleto L;Gioffrè M;Coppola G;Iodice M;Rendina I
2008
Abstract
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 ?m, are reported.File in questo prodotto:
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