Aim of the present work is the deposition of high quality a-SiC:H films by a new designed Ultra High Vacum PECVD System, with and without hydrogen dilution, the study of their optoelectronic properties and their inclusion in p-i-n structures such as photovoltaic solar cells and light emitting devices.

High quality a-SiC:H films and their application in p-i-n structures for optoelectronic devices

R Rizzoli;C Summonte;
1995

Abstract

Aim of the present work is the deposition of high quality a-SiC:H films by a new designed Ultra High Vacum PECVD System, with and without hydrogen dilution, the study of their optoelectronic properties and their inclusion in p-i-n structures such as photovoltaic solar cells and light emitting devices.
1995
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
XXIV
3
61
63
3
Sì, ma tipo non specificato
10
info:eu-repo/semantics/article
262
Demichelis, F; Crovini, G; Giorgis, F; Pirri, Cf; Tresso, E; Galloni, R; Rizzoli, R; Summonte, C; Zignani, F; Rava, P
01 Contributo su Rivista::01.01 Articolo in rivista
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/237903
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