Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures and InAs layers were grown on InP (100) substrates by using molecular beam epitaxy (MBE). The samples have been investigated by means of selected-area X-ray spectroscopy (SAXPS) combined with low energy ion sputtering. The heterointerface widths in the In0.53Ga0.47As/InAs/In0.53Ga0.47As samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed. The thickness of the ternary sublayer formed between the InAs and InP substrate has been studied in the samples deoxidized under the flux of arsenic (AsH3) or phosphorus (PH3). The suitability of SAXPS depth profiling technique for the qualitative characterization of ultra-thin heterostructures is discussed considering the limitations of experimental depth resolution.
Interface abruptness in strained III-V heterostructures
MR Bruni;S Kaciulis;G Righini
1996
Abstract
Highly strained In0.53Ga0.47As/InAs/In0.53Ga0.47As heterostructures and InAs layers were grown on InP (100) substrates by using molecular beam epitaxy (MBE). The samples have been investigated by means of selected-area X-ray spectroscopy (SAXPS) combined with low energy ion sputtering. The heterointerface widths in the In0.53Ga0.47As/InAs/In0.53Ga0.47As samples grown under diverse MBE conditions (standard and virtual surfactant) have been analysed. The thickness of the ternary sublayer formed between the InAs and InP substrate has been studied in the samples deoxidized under the flux of arsenic (AsH3) or phosphorus (PH3). The suitability of SAXPS depth profiling technique for the qualitative characterization of ultra-thin heterostructures is discussed considering the limitations of experimental depth resolution.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
