The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities in p-type silicon substrates has been investigated by the use of resistivity, lifetime and infrared absorption spectroscopy measurements. Copper proved to be a donor impurity in Si and showed a low level of reaction with the oxygen precipitate. This level of reaction, which resulted in the emission of a small amount of interstitial oxygen, appears to be responsible for the poor ability of the high temperature oxygen precipitate to act as an efficient gettering sink for this impurity.
ON THE INTRINSIC GETTERING OF CU IN P-TYPE SILICON
APoggi
1991
Abstract
The ability of high temperature oxygen precipitate to act as a gettering sink for copper impurities in p-type silicon substrates has been investigated by the use of resistivity, lifetime and infrared absorption spectroscopy measurements. Copper proved to be a donor impurity in Si and showed a low level of reaction with the oxygen precipitate. This level of reaction, which resulted in the emission of a small amount of interstitial oxygen, appears to be responsible for the poor ability of the high temperature oxygen precipitate to act as an efficient gettering sink for this impurity.File in questo prodotto:
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