POGGI, ANTONELLA
POGGI, ANTONELLA
Istituto per la Microelettronica e Microsistemi - IMM - Sede Secondaria Bologna
Il Tecnopolo AMBIMAT del CNR
2016 Bianconi, Marco; Poggi, Antonella
Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices
2016 Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna
A new sensitive and fast detection system for amphetamine type stimulants (ATS), based on gas-chromatography (GC) and hollow fiber infrared absorption spectroscopy (HF-IRAS)
2014 Liberatore, Nicola; Luciani, Domenico; Mengali, Sandro; Viola, Roberto; Cardinali, GIAN CARLO; Elmi, Ivan; Poggi, Antonella; Zampolli, Stefano; Biavardi, Elisa; Dalcanale, Enrico; Menozzi, Daniela
THERMAL CONDUCTIVITY DETECTOR (TCD) FOR APPLICATIONS IN FAST GAS- CHROMATOGRAPHIC (GC)
2014 Cozzani, Enrico; Cardinali, GIAN CARLO; Messina, Marco; Zampolli, Stefano; Elmi, Ivan; Poggi, Antonella; Mancarella, Fulvio
METHOD FOR MAKING A SILICON SEPARATION MICROCOLUMN FOR CHROMATOGRAPHY OR GAS CHROMATOGRAPHY
2013 MANCARELLA, Fulvio ; ELMI, Ivan ; BELLUCE, Maddalena ; ZAMPOLLI, Stefano ; POGGI, Antonella ; CARDINALI, Giancarlo ; GALLI, Stefano ; GALLI, Mario ; BARAVELLI, Filippo
Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography
2013 Mengali, Sandro; Liberatore, Nicola; Luciani, Domenico; Viola, Roberto; Cardinali, GIAN CARLO; Elmi, Ivan; Poggi, Antonella; Zampolli, Stefano; Biavardi, Elisa; Dalcanale, Enrico; Bonadio, Federica; Delemont, Olivier; Esseiva, Pierre; Romolo Francesco, S
A novel pneumatically driven SU-8 microvalve for high speed gas chromatographic applications
2012 Nubile, A; Nubile, A; Poggi, A; Cozzani, E; Elmi, I; Zampolli, S; Messina, M; Cardinali, G C; Mancarella, F; Belluce, M
Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si
2012 Bosi, M; Attolini, G; Watts, Be; Roncaglia, A; Poggi, A; Mancarella, F; Moscatelli, F; Belsito, L; Ferri, M
beta-SiC NWs grown on patterned and MEMS silicon substrates
2011 Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella
Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states
2011 Pintilie, I; Moscatell, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G
The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface
2011 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G
Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
2010 Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG
Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, Luca; L,
Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs
2010 Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability
2010 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, Roberta; R,
Passivation by N implantation of the SiO2 /SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability
2010 Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R
Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers
2010 Anzalone, R; Camarda, M; Alquier, D; Italia, M; Severino, A; Piluso, N; La Magna, A; Foti, G; Locke, C; Saddow, Se; Roncaglia, A; Mancarella, F; Poggi, A; D'Arrigo, G; La Via, F
ß-SiC NWs grown on patterned and MEMS silicon substrates
2010 Watts B. E.; Attolini G.; Rossi F.; Salviati G.; Mancarella F.; Ferri M.; Roncaglia A.; Poggi A.
Al+ implanted 4H-SiC p+n diodes: SIMS, C-V and DLTS characterizations
2009 Nipoti, R; Fabbri, F; Moscatelli, F; Poggi, A; Cavallini, A; Carnera, A
Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
2009 Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Il Tecnopolo AMBIMAT del CNR | 1-gen-2016 | Bianconi, Marco; Poggi, Antonella | |
| Processing-Induced Electrically Active Defects in Black Silicon Nanowire Devices | 1-gen-2016 | Carapezzi, Stefania; Castaldini, Antonio; Mancarella, Fulvio; Poggi, Antonella; Cavallini, Anna | |
| A new sensitive and fast detection system for amphetamine type stimulants (ATS), based on gas-chromatography (GC) and hollow fiber infrared absorption spectroscopy (HF-IRAS) | 1-gen-2014 | Liberatore, Nicola; Luciani, Domenico; Mengali, Sandro; Viola, Roberto; Cardinali, GIAN CARLO; Elmi, Ivan; Poggi, Antonella; Zampolli, Stefano; Biavardi, Elisa; Dalcanale, Enrico; Menozzi, Daniela | |
| THERMAL CONDUCTIVITY DETECTOR (TCD) FOR APPLICATIONS IN FAST GAS- CHROMATOGRAPHIC (GC) | 1-gen-2014 | Cozzani, Enrico; Cardinali, GIAN CARLO; Messina, Marco; Zampolli, Stefano; Elmi, Ivan; Poggi, Antonella; Mancarella, Fulvio | |
| METHOD FOR MAKING A SILICON SEPARATION MICROCOLUMN FOR CHROMATOGRAPHY OR GAS CHROMATOGRAPHY | 1-gen-2013 | MANCARELLA, Fulvio ; ELMI, Ivan ; BELLUCE, Maddalena ; ZAMPOLLI, Stefano ; POGGI, Antonella ; CARDINALI, Giancarlo ; GALLI, Stefano ; GALLI, Mario ; BARAVELLI, Filippo | |
| Rapid screening and identification of illicit drugs by IR absorption spectroscopy and gas chromatography | 1-gen-2013 | Mengali, Sandro; Liberatore, Nicola; Luciani, Domenico; Viola, Roberto; Cardinali, GIAN CARLO; Elmi, Ivan; Poggi, Antonella; Zampolli, Stefano; Biavardi, Elisa; Dalcanale, Enrico; Bonadio, Federica; Delemont, Olivier; Esseiva, Pierre; Romolo Francesco, S | |
| A novel pneumatically driven SU-8 microvalve for high speed gas chromatographic applications | 1-gen-2012 | Nubile, A; Nubile, A; Poggi, A; Cozzani, E; Elmi, I; Zampolli, S; Messina, M; Cardinali, G C; Mancarella, F; Belluce, M | |
| Epitaxial growth, mechanical and electrical properties of SiC/Si and SiC/poly-Si | 1-gen-2012 | Bosi, M; Attolini, G; Watts, Be; Roncaglia, A; Poggi, A; Mancarella, F; Moscatelli, F; Belsito, L; Ferri, M | |
| beta-SiC NWs grown on patterned and MEMS silicon substrates | 1-gen-2011 | Watts, BERNARD ENRICO; Bernard Enrico, E; Attolini, Giovanni; Attolini, Giovanni; Rossi, Francesca; Rossi, Francesca; Bosi, Matteo; Bosi, Matteo; Salviati, Giancarlo; Salviati, Giancarlo; Mancarella, Fulvio; Mancarella, Fulvio; Ferri, Matteo; Bosi, Matteo; Roncaglia, Alberto; Roncaglia, Alberto; Poggi, Antonella; Poggi, Antonella | |
| Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states | 1-gen-2011 | Pintilie, I; Moscatell, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G | |
| The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO(2) interface | 1-gen-2011 | Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, L S; Svensson, B G | |
| Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation | 1-gen-2010 | Pintilie I; Teodorescu CM; Moscatelli F; Nipoti R; Poggi A; Solmi S; Løvlie L; Svensson BG | |
| Nitridation of the SiO(2)/SiC interface by N(+) implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs | 1-gen-2010 | Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, Luca; L, | |
| Nitridation of the SiO2/SiC Interface by N+ implantation: Hall versus field effect mobility in n-channel planar 4H-SiC MOSFETs | 1-gen-2010 | Moscatelli, F; Poggi, A; Solmi, S; Nipoti, R; Armigliato, A; Belsito, L | |
| Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability | 1-gen-2010 | Poggi, A; Moscatelli, F; Solmi, S; Nipoti, Roberta; R, | |
| Passivation by N implantation of the SiO<inf>2</inf>/SiC acceptor interface states: Impact on the oxide hole traps and the gate oxide reliability | 1-gen-2010 | Poggi, A; Moscatelli, F; Solmi, S; Nipoti, R | |
| Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers | 1-gen-2010 | Anzalone, R; Camarda, M; Alquier, D; Italia, M; Severino, A; Piluso, N; La Magna, A; Foti, G; Locke, C; Saddow, Se; Roncaglia, A; Mancarella, F; Poggi, A; D'Arrigo, G; La Via, F | |
| ß-SiC NWs grown on patterned and MEMS silicon substrates | 1-gen-2010 | Watts B. E.; Attolini G.; Rossi F.; Salviati G.; Mancarella F.; Ferri M.; Roncaglia A.; Poggi A. | |
| Al<sup>+</sup> implanted 4H-SiC p<sup>+</sup>n diodes: SIMS, C-V and DLTS characterizations | 1-gen-2009 | Nipoti, R; Fabbri, F; Moscatelli, F; Poggi, A; Cavallini, A; Carnera, A | |
| Analysis of the Electron Traps at the 4H-SiC/SiO(2) Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer | 1-gen-2009 | Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, ; B, G |