The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1-xN alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.

Tuning of the Optical Properties of In-rich InxGa1-xN (x=0.82-0.49) Alloys by Light-ion Irradiation at Low Energy

Pettinari Giorgio;Filippone Francesco;
2013

Abstract

The effects of low-energy irradiation by light ions (H and He) on the properties of In-rich InxGa1-xN alloys are investigated by optical and structural techniques. H-irradiation gives rise to a remarkable blue-shift of light emission and absorption edge energies. X-ray absorption measurements and first-principle calculations address the microscopic origin of these effects.
2013
Istituto di Struttura della Materia - ISM - Sede Roma Tor Vergata
III-nitrides
Photoluminescence
Hydrogen in semiconductors
Impurities and defects
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/244862
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? 0
social impact