3C-SiC layers were grown on Si substrates using standard precursors (SiH4 and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 degrees C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.
Structural characterization of 3C-SiC grown using methyltrichlorosilane
Bosi Matteo;Attolini Giovanni;
2013
Abstract
3C-SiC layers were grown on Si substrates using standard precursors (SiH4 and C3H8) and by adding methyl trichloro silane (MTS) to the gas phase, with growth temperatures between 1200 and 1300 degrees C. Characterization of the 3C-SiC layers shows that 3C-SiC grown with MTS has higher polycrystalline and amorphous content as well as lower residual stress.File in questo prodotto:
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