Surfaces of cubic silicon carbide (3C-SiC), grown by vapour phase epitaxy with silane and propane as precursors, were treated with plasma to remove residual species deposited during the growth procedure and the sample cooling down, or due to atmospherical contamination. The impurity traces were investigated with optical absorption spectroscopy. No morphology changes due to the plasma exposure were observed.
Plasma Treatment of 3C-SiC Surfaces
Attolini G;Bosi M
2013
Abstract
Surfaces of cubic silicon carbide (3C-SiC), grown by vapour phase epitaxy with silane and propane as precursors, were treated with plasma to remove residual species deposited during the growth procedure and the sample cooling down, or due to atmospherical contamination. The impurity traces were investigated with optical absorption spectroscopy. No morphology changes due to the plasma exposure were observed.File in questo prodotto:
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