The syntesis and the caracterization of some bis-cyclopentadienyl hafnium derivatives were realized. Hafnium (IV) compounds were identified by NMR spectroscopy, thermogravimetric measurements and mass spectrometry methods. The temperature dependencies of saturated vapor pressure were obtained using Knudsen method. Thermodynamic parameters of sublimation processeswere calculated. Thermal decomposition processes in vacuum and in an oxigen atmosphere were studied by high temperature mass spectrometry and gas by-products were determined, The volatile Cp2Hf(NEt2)2 and Cp2HfMe2 precursors were used for the Hafnium oxide films deposition using the MOCVD tecnique. The films were characterized by X-ray diffraction and IR-spectroscopy methods. X-ray diffraction patterns show the formation of monoclinic HfO2 phase.
Thermal properties of volatile organohafnium precursors for HfO2 MOCVD processes
Carta G;Rossetto G;Sitran S;Zanella P;Crociani L;
2005
Abstract
The syntesis and the caracterization of some bis-cyclopentadienyl hafnium derivatives were realized. Hafnium (IV) compounds were identified by NMR spectroscopy, thermogravimetric measurements and mass spectrometry methods. The temperature dependencies of saturated vapor pressure were obtained using Knudsen method. Thermodynamic parameters of sublimation processeswere calculated. Thermal decomposition processes in vacuum and in an oxigen atmosphere were studied by high temperature mass spectrometry and gas by-products were determined, The volatile Cp2Hf(NEt2)2 and Cp2HfMe2 precursors were used for the Hafnium oxide films deposition using the MOCVD tecnique. The films were characterized by X-ray diffraction and IR-spectroscopy methods. X-ray diffraction patterns show the formation of monoclinic HfO2 phase.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
