The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 um/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.
High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization
La Via F;
2006-01-01
Abstract
The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 um/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail. This process can be very promising for high power devices with a breakdown voltage of 10 kV.File in questo prodotto:
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