The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined. (C) 2014 AIP Publishing LLC.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

Zappettini A;Zambelli N;Benassi G;Calestani D;Pavesi M
2014

Abstract

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined. (C) 2014 AIP Publishing LLC.
2014
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
CDTE
GROWTH
DETECTORS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/256435
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