PAVESI, MAURA
PAVESI, MAURA
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs
2009 Pavesi, M; Rossi, F; Manfredi, M; Salviati, G; Meneghini, M; Zanoni, E
Accelerated DC-aging of InGaN LEDs: effects on electrical and optical properties
2003 Castaldini A.; Cavallini A.; Salviati G.; Rossi F.; Armani N.; Pavesi M.; Manfredi M.; Meneghesso G.; Levada S.; Zanoni E.
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors
2014 Santi, A; Zanichelli, M; Piacentini, G; Pavesi, M; Cola, A; Farella, I
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material
2008 Zappettini, A; Zha, M; Marchini, L; Calestani, D; Mosca, R; Gombia, E; Zanotti, L; Zanichelli, M; Pavesi, M; Auricchio, N; Caroli, E
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material
2008 Zappettini, A; Zha, M; Marchini, L; Calestani, D; Mosca, R; Gombia, E; Zanichelli, M; Pavesi, M; Auricchio, N
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth
2006 Zappettini, A; Zha, M; Pavesi, M; Bissoli, F; Zanotti, L
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth
2007 Zappettini, A; Zha, M; Pavesi, M; Zanichelli, M; Bissoli, F; Zanotti, L; Auricchio, N; Caroli, E
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
2007 Zappettini, A; Zha, M; Pavesi, M; Zanotti, L
Characterization of Bulk and Surface Transport Mechanisms by Means of the Photocurrent Technique
2008 Zanichelli, M; Pavesi, M; Marchini, L; Zappettini, A
Characterization of bulk and surface transport mechanisms by means of the photocurrent technique
2008 Zanichelli, M; Pavesi, M; Zappettini, A; Marchini, L; Manfredi, M
Characterization of gan-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies
2002 Armani, N; Grillo, V; Salviati, G; Manfredi, M; Pavesi, M; Chini, A; Meneghesso, G; Zanoni, E
Characterization of X-Ray Detectors Based on Encapsulated Vertical Bridgman Grown CZT Crystals for Astrophysics Application
2007 Pavesi, M; Zanichelli, M; Marchini, L; Calestani, D; Zappettini, A; Zha, M; Auricchio, N; Caroli, E; Quadrini, E
CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method
2007 Pavesi, M; Zanichelli, M; Gombia, E; Mosca, R; Marchini, L; Zha, M; Zappettini, A; Caroli, E; Auricchio, N; Negri, B
CZT X-rays detectors obtained by the boron oxide encapsulated vertical Bridgman method
2007 Pavesi M.; Zanichelli M.; Gombia E.; Mosca R.; Marchini L.; Zha M.; Zappettini A.; Caroli E.; Auricchio N.; Negri B.
Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes
2006 Pavesi M.; Rossi F.; Zanoni E.
Enhanced luminescence of CuCl microcrystals dispersed in a hybrid organic-inorganic matrix.
2007 Mosca R.; Chiarella F.; Pavesi M.; Zappettini A.; Ferro P.; Besagni T.; Licci F.
Enhanced luminescence of CuCl microcrystals in a organic-inorganic hybrid matrix
2007 Chiarella, F; Mosca, R; Pavesi, M; Zappettini, A Ferro P Licci F
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors
2018 Pavesi, M; Fabbri, F; Boschi, F; Piacentini, G; Baraldi, A; Bosi, M; Gombia, E; Parisini, A; Fornari, R
Evaluation of electric field profile and transport parameters in solid-state CZT detectors
2016 Santi, Andrea; Piacentini, Giovanni; Zanichelli, Massimiliano; Bettelli, Manuele; Zappettini, Andrea; Pavesi, Maura
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels
2004 Meneghesso, G; Levada, S; Zanoni, E; Salviati, G; Armani, N; Rossi, F; Pavesi, M; Manfredi, M; Cavallini, A; Castaldini, A; Du, S; Eliashevich, I
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
A new approach to correlate transport processes and optical efficiency in GaN-based LEDs | 1-gen-2009 | Pavesi, M; Rossi, F; Manfredi, M; Salviati, G; Meneghini, M; Zanoni, E | |
Accelerated DC-aging of InGaN LEDs: effects on electrical and optical properties | 1-gen-2003 | Castaldini A.; Cavallini A.; Salviati G.; Rossi F.; Armani N.; Pavesi M.; Manfredi M.; Meneghesso G.; Levada S.; Zanoni E. | |
An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors | 1-gen-2014 | Santi, A; Zanichelli, M; Piacentini, G; Pavesi, M; Cola, A; Farella, I | |
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material | 1-gen-2008 | Zappettini, A; Zha, M; Marchini, L; Calestani, D; Mosca, R; Gombia, E; Zanotti, L; Zanichelli, M; Pavesi, M; Auricchio, N; Caroli, E | |
Boron Oxide Encapsulated Vertical Bridgman Grown CdZnTe Crystals as X-ray Detector Material | 1-gen-2008 | Zappettini, A; Zha, M; Marchini, L; Calestani, D; Mosca, R; Gombia, E; Zanichelli, M; Pavesi, M; Auricchio, N | |
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth | 1-gen-2006 | Zappettini, A; Zha, M; Pavesi, M; Bissoli, F; Zanotti, L | |
Boron Oxide Encapsulated Vertical Bridgman: a Method for Preventing Crystal-Crucible Contact in the CdZnTe Growth | 1-gen-2007 | Zappettini, A; Zha, M; Pavesi, M; Zanichelli, M; Bissoli, F; Zanotti, L; Auricchio, N; Caroli, E | |
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique | 1-gen-2007 | Zappettini, A; Zha, M; Pavesi, M; Zanotti, L | |
Characterization of Bulk and Surface Transport Mechanisms by Means of the Photocurrent Technique | 1-gen-2008 | Zanichelli, M; Pavesi, M; Marchini, L; Zappettini, A | |
Characterization of bulk and surface transport mechanisms by means of the photocurrent technique | 1-gen-2008 | Zanichelli, M; Pavesi, M; Zappettini, A; Marchini, L; Manfredi, M | |
Characterization of gan-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies | 1-gen-2002 | Armani, N; Grillo, V; Salviati, G; Manfredi, M; Pavesi, M; Chini, A; Meneghesso, G; Zanoni, E | |
Characterization of X-Ray Detectors Based on Encapsulated Vertical Bridgman Grown CZT Crystals for Astrophysics Application | 1-gen-2007 | Pavesi, M; Zanichelli, M; Marchini, L; Calestani, D; Zappettini, A; Zha, M; Auricchio, N; Caroli, E; Quadrini, E | |
CZT X-ray detectors obtained by the boron encapsulated vertical Bridgman method | 1-gen-2007 | Pavesi, M; Zanichelli, M; Gombia, E; Mosca, R; Marchini, L; Zha, M; Zappettini, A; Caroli, E; Auricchio, N; Negri, B | |
CZT X-rays detectors obtained by the boron oxide encapsulated vertical Bridgman method | 1-gen-2007 | Pavesi M.; Zanichelli M.; Gombia E.; Mosca R.; Marchini L.; Zha M.; Zappettini A.; Caroli E.; Auricchio N.; Negri B. | |
Effects of extreme dc-ageing and electron-beam irradiation in InGaN/AlGaN/GaN light-emitting diodes | 1-gen-2006 | Pavesi M.; Rossi F.; Zanoni E. | |
Enhanced luminescence of CuCl microcrystals dispersed in a hybrid organic-inorganic matrix. | 1-gen-2007 | Mosca R.; Chiarella F.; Pavesi M.; Zappettini A.; Ferro P.; Besagni T.; Licci F. | |
Enhanced luminescence of CuCl microcrystals in a organic-inorganic hybrid matrix | 1-gen-2007 | Chiarella, F; Mosca, R; Pavesi, M; Zappettini, A Ferro P Licci F | |
epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors | 1-gen-2018 | Pavesi, M; Fabbri, F; Boschi, F; Piacentini, G; Baraldi, A; Bosi, M; Gombia, E; Parisini, A; Fornari, R | |
Evaluation of electric field profile and transport parameters in solid-state CZT detectors | 1-gen-2016 | Santi, Andrea; Piacentini, Giovanni; Zanichelli, Massimiliano; Bettelli, Manuele; Zappettini, Andrea; Pavesi, Maura | |
Failure mechanisms of GaN-based LEDs related with instabilities in doping profile and deep levels | 1-gen-2004 | Meneghesso, G; Levada, S; Zanoni, E; Salviati, G; Armani, N; Rossi, F; Pavesi, M; Manfredi, M; Cavallini, A; Castaldini, A; Du, S; Eliashevich, I |