We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique.

Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

Cesare Frigeri;Alexey Fedorov;
2014

Abstract

We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique.
2014
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
nanowires
III-V semiconductors
molecular beam epitaxy
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/256604
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