The effects of thermal and intrinsic stress produced on SOI substrates by the field oxidation have been studied. Results of and structural characterization obtained on SOI have been compared with standard bulk Si and a different structure has been adopted order to reduce the induced stress. (C) 2007 Published by Elsevier Ltd.

LOCOS induced stress effects on SOI bipolar devices

Privitera S;
2007

Abstract

The effects of thermal and intrinsic stress produced on SOI substrates by the field oxidation have been studied. Results of and structural characterization obtained on SOI have been compared with standard bulk Si and a different structure has been adopted order to reduce the induced stress. (C) 2007 Published by Elsevier Ltd.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/259513
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