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PRIVITERA, STEFANIA MARIA SERENA

PRIVITERA, STEFANIA MARIA SERENA  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 51 (tempo di esecuzione: 0.035 secondi).
Titolo Data di pubblicazione Autore(i) File
"Direct" measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy 1-gen-2002 Privitera, S; La Via, F; Quilici, S; Meinardi, F; Grimaldi, MG; Rimini, E
Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting 1-gen-2016 Han, Tingting; Shi, Yuanyuan; Song, Xiaoxue; Mio, Antonio; Valenti, Luca; Hui, Fei; Privitera, Stefania; Lombardo, Salvatore; Lanza, Mario
Amorphous-fcc transition in Ge2Sb2Te5 1-gen-2010 Lombardo S; Rimini E; Grimaldi MG; Privitera S
Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements 1-gen-2004 Privitera, S.; Rimini, E.; Zonca, R.
C49-C54 phase transition in nanometric titanium disilicide grains 1-gen-2004 Alessandrino, Ms; Privitera, S; Grimaldi, Mg; Bongiorno, C; Pannitteri, S; La Via, F
Conductive filament structure in HfO2 ReRAM devices 1-gen-2014 S. Privitera; G. Bersuker; B. Butcher; S. Lombardo; C. Bongiorno; D.C. Gilmer;P.D. Kirsch
Conductive filament structure in HfO<inf>2</inf> resistive switching memory devices 1-gen-2015 Privitera S.; Bersuker G.; Lombardo S.; Bongiorno C.; Gilmer D.C.
Correlation of dot size distribution with luminescence and electrical transport of Si quantum dots embedded in SiO2 1-gen-2000 S. Lombardo; S. Coffa; C. Bongiorno; C. Spinella; E. Castagna; A. Sciuto; C. Gerardi; F. Ferrari; B. Fazio; S. Privitera
Crystal nucleation and growth processes in Ge2Sb2Te5 1-gen-2004 Privitera, S; Bongiorno, C; Rimini, E; Zonca, R
Crystallization and phase separation in Ge2+xSb2Te5 thin films 1-gen-2003 Privitera S.; Rimini E.; Bongiorno C.; Zonca R.; Pirovano A.; Bez R.
Crystallization properties of Sb-rich GeSbTe alloys by in-situ morphological and electrical analysis 1-gen-2017 D'Arrigo, G.; Mio, A. M.; Boniardi, M.; Redaelli, A.; Varesi, E.; Privitera, S.; Pellegrino, G.; Spinella, C.; Rimini, E.
Determination of C54 nucleation site density in narrow stripes by sheet resistance measurements and OEº-Raman spectroscopy 1-gen-2000 La Via, F; Privitera, S; Grimaldi, Mg; Rimini, E; Quilici, S; Meinardi, F
Effect of the linewidth reduction on the characteristic time spread in C49-C54 phase transition 1-gen-1998 Privitera, S; La Via, F; Grimaldi, Mg; Rimini, E
Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and higher scalability of the TiSi2 process 1-gen-2001 La Via F.; Privitera S.; Mammoliti F.; Grimaldi M.G.
Effects of a Ta interlayer on the titanium silicide reaction: C40 formation and scalability of the TiSi2 process 1-gen-2002 La Via F.; Privitera S.; Mammoliti F.; Grimaldi M.G.
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 1-gen-2007 Privitera, S; Rimini, E; Bongiorno, C; Pirovano, A; Bez, R
Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films 1-gen-2007 Privitera, S.; Rimini, E.; Bongiorno, C.; Pirovano, A.; Bez, R.
Effects of the growth rate on the quality of 4H silicon carbide films for MOSFET applications 1-gen-2014 Camarda, M; Privitera, S; Anzalone, R; Piluso, N; Fiorenza, P; Alberti, A; Pellegrino, G; La Magna, A; La Via, F; Vecchio, C; Mauceri, M; Litrico, G; Pecora, A; Crippa, D
Electrical properties of defects in 4H-SiC investigated by photo-induced-currents measurements 1-gen-2016 Privitera, S; Litrico, G; Camarda, M; Piluso, N; La Via, F
Electrically Trimmable Phase Change Ge2Sb2Te5 Resistors With Tunable Temperature Coefficient of Resistance 1-gen-2014 Privitera, Stefania; D'Arrigo, Giuseppe; Mio, Antonio M.; Piluso, Nicolo; La Via, Francesco; Rimini, Emanuele