The presence of crossing points in the forward J(D)-V-D curves of 4H-SiC pin diodes is analyzed by means of numerical and analytical models. The analysis allows one to justify the different temperature coefficients reported in the literature for SiC diodes and the interlacing behavior of their J(D)-V-D curves. A simple formula for predicting the position of the crossing-point is proposed.
On the Crossing-Point of 4H-SiC Power Diodes Characteristics
Nipoti Roberta;
2014
Abstract
The presence of crossing points in the forward J(D)-V-D curves of 4H-SiC pin diodes is analyzed by means of numerical and analytical models. The analysis allows one to justify the different temperature coefficients reported in the literature for SiC diodes and the interlacing behavior of their J(D)-V-D curves. A simple formula for predicting the position of the crossing-point is proposed.File in questo prodotto:
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