We measured the nonlinear response of field effect transistors fabricated with GaAs-based heterostructures by performing direct detection, heterodyne and subharmonic mixing measurements. The study of the spectral responsivity as a function of different antenna coupling is presented in the 0.18-0.4 GHz range. We also verified the subharmonic and heterodyne mixing at 0.6 THz in a HFET detector with a broadband antenna.

Subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs field effect transistor

Giovine Ennio;
2014

Abstract

We measured the nonlinear response of field effect transistors fabricated with GaAs-based heterostructures by performing direct detection, heterodyne and subharmonic mixing measurements. The study of the spectral responsivity as a function of different antenna coupling is presented in the 0.18-0.4 GHz range. We also verified the subharmonic and heterodyne mixing at 0.6 THz in a HFET detector with a broadband antenna.
2014
Istituto di fotonica e nanotecnologie - IFN
field effect transistors
heterodyne mixing
integrated antenna
subharmonic mixing
Terahertz detection
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/265434
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