In this work the temperature dependent currentvoltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes
F Moscatelli;M Puzzanghera;R Nipoti
2014
Abstract
In this work the temperature dependent currentvoltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
