CNR Institutional Research Information System

In this work the temperature dependent currentvoltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.

Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p+-i-n diodes

F Moscatelli;M Puzzanghera;R Nipoti
2014

Abstract

In this work the temperature dependent currentvoltage characteristics of microwave annealed 4H-SiC vertical p+-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
2014
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
Ion Implantation Technology (IIT), 2014 20th International Conference on
"Ion Implantation Technology (IIT), 2014 20th International Conference on"
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6940050&tag=1
IEEE
New York
STATI UNITI D'AMERICA
Sì, ma tipo non specificato
June 26 -July 4, 2014
Portland, OR, USA
4H-SiC; PiN diode; recombination-generation centers; Temperature dependent
The proceedings of this conference will be available for purchase through Curran Associates.
6940050
3
none
A. Nath; Mulpuri V. Rao; F. Moscatelli; M. Puzzanghera; R. Nipoti
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/268793
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? ND
social impact