Rapid isothermal annealing of P or As layers heavily implanted in LT AN BR 100 RT AN BR Si wafers has been carried out by using a new electron beam system. Diodes with good electrical characteristics have been fabricated by irradiating the wafers on the back-side to a suitable thermal cycle. The impurity redistribution is greatly reduced as compared to conventional furnace annealing (1000 degree C, 30 min). C-V measurements on MOS structures show that this technique does not cause significant oxide damage when the irradiation is performed on the back-side of the wafer.

RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM.

Dori Leonello;Impronta Maurizio;Lulli Giorgio;Merli Pier Giorgio;Severi Maurizio
1983

Abstract

Rapid isothermal annealing of P or As layers heavily implanted in LT AN BR 100 RT AN BR Si wafers has been carried out by using a new electron beam system. Diodes with good electrical characteristics have been fabricated by irradiating the wafers on the back-side to a suitable thermal cycle. The impurity redistribution is greatly reduced as compared to conventional furnace annealing (1000 degree C, 30 min). C-V measurements on MOS structures show that this technique does not cause significant oxide damage when the irradiation is performed on the back-side of the wafer.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/272153
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 0
  • ???jsp.display-item.citation.isi??? ND
social impact