Rapid isothermal annealing of P or As layers heavily implanted in LT AN BR 100 RT AN BR Si wafers has been carried out by using a new electron beam system. Diodes with good electrical characteristics have been fabricated by irradiating the wafers on the back-side to a suitable thermal cycle. The impurity redistribution is greatly reduced as compared to conventional furnace annealing (1000 degree C, 30 min). C-V measurements on MOS structures show that this technique does not cause significant oxide damage when the irradiation is performed on the back-side of the wafer.
RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM.
Dori Leonello;Impronta Maurizio;Lulli Giorgio;Merli Pier Giorgio;Severi Maurizio
1983
Abstract
Rapid isothermal annealing of P or As layers heavily implanted in LT AN BR 100 RT AN BR Si wafers has been carried out by using a new electron beam system. Diodes with good electrical characteristics have been fabricated by irradiating the wafers on the back-side to a suitable thermal cycle. The impurity redistribution is greatly reduced as compared to conventional furnace annealing (1000 degree C, 30 min). C-V measurements on MOS structures show that this technique does not cause significant oxide damage when the irradiation is performed on the back-side of the wafer.File in questo prodotto:
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