During theheteroepitaxialgrowthofathin film onathicksubstrate,importantstressesariseinthe grownmaterialandmayinfluence thephysicalpropertiesofthe film. Theresidualstressesresultina bending ofthesubstrate/film system.Inthisworktheevaluationofthewafercurvatureandtheresidual stress alongdifferentcrystallographicdirectionsofthewaferwasproposed.Performedbyaninterfero- metric opticalprofilometer,opticalmicroscopeandX-raydiffractionanalysis,thecurvatureofthewafer along the[110]and[110]waferdirectionswasobservedforhetero-epitaxialCubicSiliconCarbide (3C-SiC) onSi(001) films. Asaconsequenceofthestressgeneratedduringhetero-epitaxy,duetothe difference inthermalexpansioncoefficient andlatticemismatchbetweenthetwomaterials,an asymmetric wafercurvaturewasobserved
Evaluation of 3C-SiC/Si residual stressand curvatures along different wafer direction
alessandra alberti;francesco la via
2014
Abstract
During theheteroepitaxialgrowthofathin film onathicksubstrate,importantstressesariseinthe grownmaterialandmayinfluence thephysicalpropertiesofthe film. Theresidualstressesresultina bending ofthesubstrate/film system.Inthisworktheevaluationofthewafercurvatureandtheresidual stress alongdifferentcrystallographicdirectionsofthewaferwasproposed.Performedbyaninterfero- metric opticalprofilometer,opticalmicroscopeandX-raydiffractionanalysis,thecurvatureofthewafer along the[110]and[110]waferdirectionswasobservedforhetero-epitaxialCubicSiliconCarbide (3C-SiC) onSi(001) films. Asaconsequenceofthestressgeneratedduringhetero-epitaxy,duetothe difference inthermalexpansioncoefficient andlatticemismatchbetweenthetwomaterials,an asymmetric wafercurvaturewasobservedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
