Similarly to inorganic memristors, the organic memristive devices reveal a variation of the hysteresis loop upon the frequency of the applied bias voltage. The on/off ratio of the conductivity increases from 4 to 1000 Limes for the variation of time delay (equilibration after the application of the voltage increment) from 5 to 60 s. Being implemented in multi-element electrical circuits memristive devices provide a cross-talk, leading to an equilibration trend of the conductivity values. This effect is mainly related to the formation of stable signal pathways. (C) 2014 Elsevier Ltd. All rights reserved.

Hysteresis loop and cross-talk of organic memristive devices

Dimonte Alice;Pavesi Maura;Erokhin Victor
2014

Abstract

Similarly to inorganic memristors, the organic memristive devices reveal a variation of the hysteresis loop upon the frequency of the applied bias voltage. The on/off ratio of the conductivity increases from 4 to 1000 Limes for the variation of time delay (equilibration after the application of the voltage increment) from 5 to 60 s. Being implemented in multi-element electrical circuits memristive devices provide a cross-talk, leading to an equilibration trend of the conductivity values. This effect is mainly related to the formation of stable signal pathways. (C) 2014 Elsevier Ltd. All rights reserved.
2014
Istituto dei Materiali per l'Elettronica ed il Magnetismo - IMEM
Organic memristor
Hysteresis loop
Cross-talk
Pathways
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/278804
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