In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NFmin=0.87dB, GASS=10.5dB @ 10GHz) have been measured with an LG=250nm device without FP, while with the additional FP protection a minimum NFmin=1.5dB and GASS=13.5dB have been reached.
Low noise performance of scalable sub-quarter micron GaN HEMT with field plate technology
Giovine E;
2011
Abstract
In this work an innovative GaN HEMT technology based on a scalable Gate Length (80nm, 150nm and 250nm) process with complementary integration of a Schottky Field Plate (FP) is presented. The characterization results are compared between different Gate Lengths and FP topologies configurations, fabricated on the same wafer. In particular, remarkable low noise performances (NFmin=0.87dB, GASS=10.5dB @ 10GHz) have been measured with an LG=250nm device without FP, while with the additional FP protection a minimum NFmin=1.5dB and GASS=13.5dB have been reached.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
