In recent years Silicon Carbide (SiC) photodiodes have been proposed for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200 nm-400 nm), excellent visible blindness, low dark current and high speed. Here, we report on the electro-optical performances and use in application of high signal-to noise ratio low reverse biased 4H-SiC vertical Schottky photodiodes based on the pinch-off surface effect, obtained by means of self-aligned Nickel Silicide (Ni2Si) interdigitated contacts. The characteristics of these devices could make their use appealing also in nuclear applications like for example scintillation light detection.
4H-SiC Schottky Photodiodes for Ultraviolet Light Detection
A Sciuto;F Roccaforte;
2011
Abstract
In recent years Silicon Carbide (SiC) photodiodes have been proposed for ultraviolet (UV) light detection because of their robustness even in harsh environments, high quantum efficiency in all the UV range (200 nm-400 nm), excellent visible blindness, low dark current and high speed. Here, we report on the electro-optical performances and use in application of high signal-to noise ratio low reverse biased 4H-SiC vertical Schottky photodiodes based on the pinch-off surface effect, obtained by means of self-aligned Nickel Silicide (Ni2Si) interdigitated contacts. The characteristics of these devices could make their use appealing also in nuclear applications like for example scintillation light detection.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
