ROCCAFORTE, FABRIZIO
ROCCAFORTE, FABRIZIO
Istituto per la Microelettronica e Microsistemi - IMM
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
2023 Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
2022 Fiorenza P.; Maiolo L.; Fortunato G.; Zielinski M.; La Via F.; Giannazzo F.; Roccaforte F.
Materials and Processes for Schottky Contacts on Silicon Carbide
2022 Vivona M.; Giannazzo F.; Roccaforte F.
Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs
2022 Valletta, Antonio; Roccaforte, Fabrizio; LA MAGNA, Antonino; Fortunato, Guglielmo; Fiorenza, Patrick
Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC
2021 Vivona, M. ; Greco, G. ; Bellocchi, G. ; Zumbo, L. ; Di Franco, S. ; Saggio, M. ; Rascuna, S. ; Roccaforte, F.
Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition
2021 Giannazzo, F; Dagher, R; Schiliro, E; Panasci, S E; Greco, G; Nicotra, G; Roccaforte, F; Agnello, S; Brault, J; Cordier, Y; Michon, A
Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide
2020 Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio
Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene
2020 Schiliro, E; Lo Nigro, R; Panasci, Se; Gelardi, Fm; Agnello, S; Yakimova, R; Roccaforte, F; Giannazzo, F
Atomic layer deposition of high-k insulators on epitaxial graphene: A review
2020 Giannazzo, F; Schiliro, E; Lo Nigro, R; Roccaforte, F; Yakimova, R
Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers
2020 Lo Nigro, Raffaella; Schiliro, Emanuela; Mannino, Giovanni; Di Franco, Salvatore; Roccaforte, Fabrizio
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures
2020 Giannazzo, F.; Schiliro', E.; Greco, G.; Roccaforte, F.
Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition
2020 Schiliro, Emanuela; Fiorenza, Patrick; Bongiorno, Corrado; Spinella, Corrado; DI FRANCO, Salvatore; Greco, Giuseppe; LO NIGRO, Raffaella; Roccaforte, Fabrizio
Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology
2020 Roccaforte, F; Spera, M; Di Franco, S; Nigro, Rl; Fiorenza, P; Giannazzo, F; Iucolano, F; Greco, G
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
2020 Giuseppe Fisicaro ; Corrado Bongiorno ; Ioannis Deretzis ; Filippo Giannazzo ; Francesco La Via ; Fabrizio Roccaforte ; Marcin Zielinski ; Massimo Zimbone ; Antonino La Magna
Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs
2020 Fiorenza, Patrick; Giannazzo, Filippo; Cascino, Salvatore; Saggio, Mario; Roccaforte, Fabrizio
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy
2020 Filippo Giannazzo ; Giuseppe Greco ; Salvatore Di Franco ; Patrick Fiorenza ; Ioannis Deretzis ; Antonino La Magna ; Corrado Bongiorno ; Massimo Zimbone ; Francesco La Via ; Marcin Zielinski ; Fabrizio Roccaforte
Introduction to Gallium Nitride Properties and Applications
2020 Fabrizio Roccaforte;Mike Leszczynski
Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices
2020 LO NIGRO, Raffaella; Schiliro, Emanuela; Fiorenza, Patrick; Roccaforte, Fabrizio
Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress
2020 Fiorenza, P; Alessandrino, M; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Bongiorno, C; Giannazzo, F; Roccaforte, F
Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact
2020 Badala, Paolo; Rascuna, Simone; Cafra, Brunella; Bassi, Anna; Smecca, Emanuele; Zimbone, Massimo; Bongiorno, Corrado; Calabretta, Cristiano; La Via, Francesco; Roccaforte, Fabrizio; Saggio, Mario; Franco, Giovanni; Messina, Angelo; La Magna, Antonino; Alberti, Alessandra
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 | 1-gen-2023 | Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F | |
| Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing | 1-gen-2022 | Fiorenza P.; Maiolo L.; Fortunato G.; Zielinski M.; La Via F.; Giannazzo F.; Roccaforte F. | |
| Materials and Processes for Schottky Contacts on Silicon Carbide | 1-gen-2022 | Vivona M.; Giannazzo F.; Roccaforte F. | |
| Reliable evaluation method for interface state density and effective channel mobility in lateral 4H-SiC MOSFETs | 1-gen-2022 | Valletta, Antonio; Roccaforte, Fabrizio; LA MAGNA, Antonino; Fortunato, Guglielmo; Fiorenza, Patrick | |
| Electrical properties of inhomogeneous tungsten carbide Schottky barrier on 4H-SiC | 1-gen-2021 | Vivona, M. ; Greco, G. ; Bellocchi, G. ; Zumbo, L. ; Di Franco, S. ; Saggio, M. ; Rascuna, S. ; Roccaforte, F. | |
| Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition | 1-gen-2021 | Giannazzo, F; Dagher, R; Schiliro, E; Panasci, S E; Greco, G; Nicotra, G; Roccaforte, F; Agnello, S; Brault, J; Cordier, Y; Michon, A | |
| Active dopant profiling and Ohmic contacts behavior in degenerate n-type implanted silicon carbide | 1-gen-2020 | Spera, Monia; Greco, Giuseppe; Severino, Andrea; Vivona, Marilena; Fiorenza, Patrick; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene | 1-gen-2020 | Schiliro, E; Lo Nigro, R; Panasci, Se; Gelardi, Fm; Agnello, S; Yakimova, R; Roccaforte, F; Giannazzo, F | |
| Atomic layer deposition of high-k insulators on epitaxial graphene: A review | 1-gen-2020 | Giannazzo, F; Schiliro, E; Lo Nigro, R; Roccaforte, F; Yakimova, R | |
| Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers | 1-gen-2020 | Lo Nigro, Raffaella; Schiliro, Emanuela; Mannino, Giovanni; Di Franco, Salvatore; Roccaforte, Fabrizio | |
| Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures | 1-gen-2020 | Giannazzo, F.; Schiliro', E.; Greco, G.; Roccaforte, F. | |
| Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition | 1-gen-2020 | Schiliro, Emanuela; Fiorenza, Patrick; Bongiorno, Corrado; Spinella, Corrado; DI FRANCO, Salvatore; Greco, Giuseppe; LO NIGRO, Raffaella; Roccaforte, Fabrizio | |
| Current transport mechanisms in au-free metallizations for cmos compatible gan hemt technology | 1-gen-2020 | Roccaforte, F; Spera, M; Di Franco, S; Nigro, Rl; Fiorenza, P; Giannazzo, F; Iucolano, F; Greco, G | |
| Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC | 1-gen-2020 | Giuseppe Fisicaro ; Corrado Bongiorno ; Ioannis Deretzis ; Filippo Giannazzo ; Francesco La Via ; Fabrizio Roccaforte ; Marcin Zielinski ; Massimo Zimbone ; Antonino La Magna | |
| Identification of two trapping mechanisms responsible of the threshold voltage variation in SiO2/4H-SiC MOSFETs | 1-gen-2020 | Fiorenza, Patrick; Giannazzo, Filippo; Cascino, Salvatore; Saggio, Mario; Roccaforte, Fabrizio | |
| Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy | 1-gen-2020 | Filippo Giannazzo ; Giuseppe Greco ; Salvatore Di Franco ; Patrick Fiorenza ; Ioannis Deretzis ; Antonino La Magna ; Corrado Bongiorno ; Massimo Zimbone ; Francesco La Via ; Marcin Zielinski ; Fabrizio Roccaforte | |
| Introduction to Gallium Nitride Properties and Applications | 1-gen-2020 | Fabrizio Roccaforte;Mike Leszczynski | |
| Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices | 1-gen-2020 | LO NIGRO, Raffaella; Schiliro, Emanuela; Fiorenza, Patrick; Roccaforte, Fabrizio | |
| Nanoscale insights on the origin of the power mosfets breakdown after extremely long high temperature reverse bias stress | 1-gen-2020 | Fiorenza, P; Alessandrino, M; Carbone, B; Di Martino, C; Russo, A; Saggio, M; Venuto, C; Zanetti, E; Bongiorno, C; Giannazzo, F; Roccaforte, F | |
| Ni/4H-SiC interaction and silicide formation under excimer laser annealing for ohmic contact | 1-gen-2020 | Badala, Paolo; Rascuna, Simone; Cafra, Brunella; Bassi, Anna; Smecca, Emanuele; Zimbone, Massimo; Bongiorno, Corrado; Calabretta, Cristiano; La Via, Francesco; Roccaforte, Fabrizio; Saggio, Mario; Franco, Giovanni; Messina, Angelo; La Magna, Antonino; Alberti, Alessandra |