ROCCAFORTE, FABRIZIO
ROCCAFORTE, FABRIZIO
Istituto per la Microelettronica e Microsistemi - IMM
4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses
2024 Anoldo, Laura; Zanetti, Edoardo; Coco, Walter; Russo, Alfio; Fiorenza, Patrick; Roccaforte, Fabrizio
Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates
2024 Schiliro', E.; Greco, G.; Fiorenza, P.; Panasci, S. E.; Di Franco, S.; Cordier, Y.; Frayssinet, E.; Lo Nigro, R.; Giannazzo, F.; Roccaforte, F.
Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications
2024 Panasci, SALVATORE ETHAN; Schiliro', Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo
Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer
2024 Greco, G.; Di Franco, S.; Lo Nigro, R.; Bongiorno, C.; Spera, M.; Badala, P.; Iucolano, F.; Roccaforte, F.
Interface Properties of MoS2 van der Waals Heterojunctions with GaN
2024 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.; Cannas, M.; Agnello, S.; Giannazzo, F.
Schottky contacts on sulfurized silicon carbide (4H-SiC) surface
2024 Roccaforte, Fabrizio; Vivona, Marilena; Panasci, Salvatore Ethan; Greco, Giuseppe; Fiorenza, Patrick; Sulyok, Attila; Koos, Antal; Pecz, Bela; Giannazzo, Filippo
Silicon Carbide materials and devices: power electronics and innovative applications
2024 Roccaforte, F.; Alquier, D.; Kimoto, T.; Agarwal, A.
Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire
2024 Panasci, S. E.; Schiliro', E.; Koos, A.; Roccaforte, F.; Cannas, M.; Agnello, S.; Pecz, B.; Giannazzo, F.
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
2023 Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio
Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2
2023 Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S.
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC
2023 Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S.
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations
2023 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F.
Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations
2023 Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F.
Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation
2023 Scandurra, Antonino; Testa, Matteo; Franzo', Giorgia; Greco, Giuseppe; Roccaforte, Fabrizio; Eloisa Castagna, Maria; Calabretta, Cristiano; Severino, Andrea; Iucolano, Ferdinando; Bruno, Elena; Mirabella, Salvatore
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
2023 Spankova, M.; Chromik, S.; Dobrocka, E.; Pribusova Slusna, L.; Talacko, M.; Gregor, M.; Pecz, B.; Koos, A.; Greco, G.; Panasci, S. E.; Fiorenza, P.; Roccaforte, F.; Cordier, Y.; Frayssinet, E.; Giannazzo, F.
Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults
2023 Vivona, M.; Fiorenza, P.; Scuderi, V.; La Via, F.; Giannazzo, F.; Roccaforte, F.
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications
2023 Giorgino, Giovanni; Greco, Giuseppe; Moschetti, Maurizio; Miccoli, Cristina; Castagna, Maria Eloisa; Tringali, Cristina; Fiorenza, Patrick; Roccaforte, Fabrizio; Iucolano, Ferdinando
Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors
2022 Deretzis, I.; Fiorenza, P.; Fazio, T.; Schiliro', E.; Lo Nigro, R.; Greco, G.; Fisicaro, G.; Roccaforte, F.; La Magna, A.
Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing
2022 Fiorenza, P; Maiolo, L; Fortunato, G; Zielinski, M; La Via, F; Giannazzo, F; Roccaforte, F
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| 4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses | 1-gen-2024 | Anoldo, Laura; Zanetti, Edoardo; Coco, Walter; Russo, Alfio; Fiorenza, Patrick; Roccaforte, Fabrizio | |
| Comparing post-deposition and post-metallization annealing treatments on Al2O3/GaN capacitors for different metal gates | 1-gen-2024 | Schiliro', E.; Greco, G.; Fiorenza, P.; Panasci, S. E.; Di Franco, S.; Cordier, Y.; Frayssinet, E.; Lo Nigro, R.; Giannazzo, F.; Roccaforte, F. | |
| Gold‐Assisted Exfoliation of Large‐Area Monolayer Transition Metal Dichalcogenides: From Interface Properties to Device Applications | 1-gen-2024 | Panasci, SALVATORE ETHAN; Schiliro', Emanuela; Roccaforte, Fabrizio; Giannazzo, Filippo | |
| Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer | 1-gen-2024 | Greco, G.; Di Franco, S.; Lo Nigro, R.; Bongiorno, C.; Spera, M.; Badala, P.; Iucolano, F.; Roccaforte, F. | |
| Interface Properties of MoS2 van der Waals Heterojunctions with GaN | 1-gen-2024 | Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Nemeth, M.; Pecz, B.; Cannas, M.; Agnello, S.; Giannazzo, F. | |
| Schottky contacts on sulfurized silicon carbide (4H-SiC) surface | 1-gen-2024 | Roccaforte, Fabrizio; Vivona, Marilena; Panasci, Salvatore Ethan; Greco, Giuseppe; Fiorenza, Patrick; Sulyok, Attila; Koos, Antal; Pecz, Bela; Giannazzo, Filippo | |
| Silicon Carbide materials and devices: power electronics and innovative applications | 1-gen-2024 | Roccaforte, F.; Alquier, D.; Kimoto, T.; Agarwal, A. | |
| Tailoring MoS2 domains size, doping, and light emission by the sulfurization temperature of ultra-thin MoOx films on sapphire | 1-gen-2024 | Panasci, S. E.; Schiliro', E.; Koos, A.; Roccaforte, F.; Cannas, M.; Agnello, S.; Pecz, B.; Giannazzo, F. | |
| Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices | 1-gen-2023 | Schiliro, Emanuela; Fiorenza, Patrick; Lo Nigro, Raffaella; Galizia, Bruno; Greco, Giuseppe; Di Franco, Salvatore; Bongiorno, Corrado; La Via, Francesco; Giannazzo, Filippo; Roccaforte, Fabrizio | |
| Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2 | 1-gen-2023 | Schiliro', E; Panasci, S. E.; Mio, Am; Nicotra, G; Agnello, S; Pecz, B; Z Radnoczi, Gy; Deretzis, I; La Magna, A.; Roccaforte, F; Lo Nigro, R.; Giannazzo, F | |
| Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC | 1-gen-2023 | Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S. | |
| Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS2 on Ion Implantation Doped 4H-SiC | 1-gen-2023 | Giannazzo, F.; Panasci, S. E.; Schiliro', E.; Fiorenza, P.; Greco, G.; Roccaforte, F.; Cannas, M.; Agnello, S.; Koos, A.; Pecz, B.; Spankova, M.; Chromik, S. | |
| Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations | 1-gen-2023 | Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F. | |
| Interface Structure and Doping of Chemical Vapor Deposition-Grown MoS2 on 4H–SiC by Microscopic Analyses and Ab Initio Calculations | 1-gen-2023 | Panasci, S. E.; Deretzis, I.; Schiliro', E.; La Magna, A.; Roccaforte, F.; Koos, A.; Pecz, B.; Agnello, S.; Cannas, M.; Giannazzo, F. | |
| Isolation of bidimensional electron gas in AlGaN/GaN heterojunction using Ar ion implantation | 1-gen-2023 | Scandurra, Antonino; Testa, Matteo; Franzo', Giorgia; Greco, Giuseppe; Roccaforte, Fabrizio; Eloisa Castagna, Maria; Calabretta, Cristiano; Severino, Andrea; Iucolano, Ferdinando; Bruno, Elena; Mirabella, Salvatore | |
| Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition | 1-gen-2023 | Spankova, M.; Chromik, S.; Dobrocka, E.; Pribusova Slusna, L.; Talacko, M.; Gregor, M.; Pecz, B.; Koos, A.; Greco, G.; Panasci, S. E.; Fiorenza, P.; Roccaforte, F.; Cordier, Y.; Frayssinet, E.; Giannazzo, F. | |
| Space charge limited current in 4H-SiC Schottky diodes in the presence of stacking faults | 1-gen-2023 | Vivona, M.; Fiorenza, P.; Scuderi, V.; La Via, F.; Giannazzo, F.; Roccaforte, F. | |
| Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications | 1-gen-2023 | Giorgino, Giovanni; Greco, Giuseppe; Moschetti, Maurizio; Miccoli, Cristina; Castagna, Maria Eloisa; Tringali, Cristina; Fiorenza, Patrick; Roccaforte, Fabrizio; Iucolano, Ferdinando | |
| Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors | 1-gen-2022 | Deretzis, I.; Fiorenza, P.; Fazio, T.; Schiliro', E.; Lo Nigro, R.; Greco, G.; Fisicaro, G.; Roccaforte, F.; La Magna, A. | |
| Electrical passivation of stacking-fault crystalline defects in MOS capacitors on cubic silicon carbide (3C-SiC) by post-deposition annealing | 1-gen-2022 | Fiorenza, P; Maiolo, L; Fortunato, G; Zielinski, M; La Via, F; Giannazzo, F; Roccaforte, F |