The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (UP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x10(17) cm(-2), energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at <= 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at >= 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+.
Buried nano - Structured layers in high temperature - Pressure treated Si : He
Raineri V
2006
Abstract
The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (UP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x10(17) cm(-2), energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at <= 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at >= 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
