CNR Institutional Research Information System

RAINERI, VITO

RAINERI, VITO  

Istituto per la Microelettronica e Microsistemi - IMM  

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Risultati 1 - 20 di 311 (tempo di esecuzione: 0.04 secondi).
Titolo Data di pubblicazione Autore(i) File
Effect of graphene/4H-SiC(0001) interface on electrostatic properties in graphene 1-gen-2012 Sonde S; Vecchio C; Giannazzo F; Yakimova R; Raineri V; Rimini E
Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures 1-gen-2012 Roccaforte, F; Greco, G; Fiorenza, P; Raineri, V; Malandrino, G; Lo Nigro, R
Graphene: Synthesis and nanoscale characterization of electronic properties 1-gen-2012 Giannazzo, F; Raineri, V
Influence of substrate dielectric permittivity on local capacitive behavior in graphene 1-gen-2012 Sonde, S; Vecchio, C; Giannazzo, F; Lo Nigro, R; Raineri, V; Rimini, E
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) 1-gen-2012 Giannazzo, F; Bongiorno, C; Di Franco, S; Rimini, E; Raineri, V
4H-SiC Schottky Photodiode Based Demonstrator Board for UV-Index Monitoring 1-gen-2011 Mazzillo, M; Shukla, P; Mallik, R; Kumar, M; Previti, R; Di Marco, G; Sciuto, A; Puglisi, Ra; Raineri, V
CaCu(3)Ti(4)O(12) single crystals: insights on growth and nanoscopic investigation 1-gen-2011 Fiorenza P; Raineri V; Ebbinghaus SG; Lo Nigro R
Electrical and structural properties of AIGaN/GaN heterostructures grown onto 8° -off-axis 4H-SiC epilayers 1-gen-2011 Roccaforte, F; Greco, G; Weng, ; M, H; Giannazzo, F; Raineri, Vito; V,
Electronic properties of graphene probed at the nanoscale 1-gen-2011 Giannazzo, F; Sonde, S; Raineri, V
High capacitance density capacitors based on calcium copper titanate thin films grown by MOCVD 1-gen-2011 P. Fiorenza; V. Raineri;R. Lo Nigro
Interdigit 4H-SiC Vertical Schottky Diode for Betavoltaic Applications 1-gen-2011 Sciuto, A; D'Arrigo, G; Roccaforte, F; Mazzillo, M; Spinella, Rc; Raineri, V
Ion beam induced defects in graphene: Raman spectroscopy and DFT calculations 1-gen-2011 Compagnini, G; Forte, G; Giannazzo, F; Raineri, V; La Magna, A; Deretzis, I
Lateral homogeneity of the electronic properties in pristine and ion-irradiated graphene probed by scanning capacitance spectroscopy 1-gen-2011 Giannazzo, F; Sonde, S; Rimini, E; Raineri, V
Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors 1-gen-2011 Frazzetto, A; Giannazzo, F; Fiorenza, P; Raineri, V; Roccaforte, F
Local electrical properties of the 4H-SiC(0001)/graphene interface 1-gen-2011 Sonde, ; Sa, B; Vecchio, ; Ca, B; Giannazzo, Filippo; Fa, ; Yakimova, ; Rc, ; Rimini, Emanuele; Ea, D; Raineri, Vito; Va,
Mesoscopic Transport Properties in Exfoliated Graphene on SiO2/Si 1-gen-2011 Raineri, V; Rimini, E; Giannazzo, F
Microscopic study of electrical properties of CrSi(2) nanocrystals in silicon 1-gen-2011 Dozsa, L; Lanyi, S; Raineri, V; Giannazzo, F; Galkin Nikolay, G
Nanoscale characterization of electrical transport at metal/3C-SiC interfaces 1-gen-2011 Eriksson J; Roccaforte F; Reshanov S; Leone S; Giannazzo F; Lo Nigro R; Fiorenza P; Raineri V
Nanoscale electro-structural characterisation of ohmic contacts formed on p-type implanted 4H-SiC 1-gen-2011 Frazzetto A; Giannazzo F; Lo Nigro R; Di Franco S; Bongiorno C; Saggio M; Zanetti E; Raineri V; Roccaforte F
Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001) 1-gen-2011 Vecchio, C; Sonde, S; Bongiorno, C; Rambach, M; Yakimova, R; Raineri, V; Giannazzo, F