In this work, the self-assembly of In3Sb1Te2 and In-doped Sb4Te1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In3Sb1Te2 and In-doped Sb4Te1 NWs were obtained for different reactor pressures at 325
MOCVD growth and structural characterization of In-Sb-Te nanowires
S Cecchi;R Cecchini;C Wiemer;M Fanciulli;E Rotunno;L Lazzarini;M Longo
2016
Abstract
In this work, the self-assembly of In3Sb1Te2 and In-doped Sb4Te1 nanowires (NWs) for phase change memories application was achieved by metal organic chemical vapor deposition, coupled with vapor-liquid-solid (VLS) mechanism, catalyzed by Au nanoparticles. Single crystal In3Sb1Te2 and In-doped Sb4Te1 NWs were obtained for different reactor pressures at 325File in questo prodotto:
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