Very low dose ion-implantation effect on heteroepitaxial 3C-SiC mechanical properties

Cubic silicon carbide (3C-SiC) is regarded as a promisingcandidate for high-power and high-frequency devices applica-tion. In order to control and modify locally the cantileverbending, or the resonant frequency of the microstructures (asrequired for sensor development), the dependence of mechan-ical properties of 3C-SiC film with the defect density(artificially induced by ion implantation) was investigated.Freestanding cantilevers were used to evaluate the mechanicalproperties and the residual stress of implanted SiC film. Themicrostructures were implanted with a very low dose of Siþionsat 80 keV, using high-voltage implantation system. The beamdeflection from the initial position, the modification offundamental resonant frequency and the micro-Raman phononmode maps were used to correlate the variation of Young'smodulus with the induced defects.