The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 OEºm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process. ¬© (2009) Trans Tech Publications, Switzerland.
Thick Epitaxial Layers Growth by Chlorine Addition
La Via F;
2008
Abstract
The growth rate of 4H-SiC epi layers has been increased up to 100 OEºm/h by chlorine addition. The epitaxial layers grown with this process have been characterized by electrical, optical and structural characterization methods. Very thick (> 100 OEºm) epitaxial layer has been grown and the Schottky diodes realized on these layers have good yield (> 87%) with a low defect density (10/cm2). This process gives the opportunity to realize very high power devices with breakdown voltages in the range of 10 kV or X-Ray and particle detectors with a low cost epitaxy process. ¬© (2009) Trans Tech Publications, Switzerland.File in questo prodotto:
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