In this paper, we use three-dimensional kinetic Monte Carlo simulations on superlattices to study the heteropolytypical growth of cubic silicon carbide polytype (3CSiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the < 11-20 > and < 1-100 > directions. We find that the preferential 3C conversion observed on < 1-100 > misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4 degrees off step-bunched 6H substrates with miscut towards the < 1-100 > direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Monte Carlo study of the early growth stages of 3C-SiC on misoriented < 11-20 > and < 1-100 > 6H-SiC substrates: role of step-island interaction
La Magna A;La Via F
2014
Abstract
In this paper, we use three-dimensional kinetic Monte Carlo simulations on superlattices to study the heteropolytypical growth of cubic silicon carbide polytype (3CSiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the < 11-20 > and < 1-100 > directions. We find that the preferential 3C conversion observed on < 1-100 > misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4 degrees off step-bunched 6H substrates with miscut towards the < 1-100 > direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, WeinheimI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
