In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p(+)-i-n diodes
Moscatelli F;Mancarella F;Nipoti R
2014
Abstract
In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.File in questo prodotto:
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