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In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.

Temperature dependent current-voltage characteristics of microwave annealed Al+ implanted 4H-SiC p(+)-i-n diodes

Moscatelli F;Mancarella F;Nipoti R
2014

Abstract

In this work the temperature dependent current-voltage characteristics of microwave annealed 4H-SiC vertical p(+)-i-n diodes are studied to identify some of the traps which affect the generation-recombination current of these diodes.
2014
Istituto per la Microelettronica e Microsistemi - IMM
Inglese
IEEE proceedings "Ion Implantation Technology (IIT), 2014 20th International Conference on"
20th International Conference on Ion Implantation Technology (IIT)
4
http://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6940050&tag=1&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6940050%26tag%3D1
Sì, ma tipo non specificato
June 26 2014-July 4 2014
Portland, OR, USA
4H-SiC
p-i-n diode
ion-implantation
Arrhenius plot
recombination-generation centers
WOS:000349472200099
2
none
Nath, A.; Rao, Mulpuri V.; Moscatelli, F.; Puzzanghera, M.; Mancarella, F.; Nipoti, R.
273
info:eu-repo/semantics/conferenceObject
04 Contributo in convegno::04.01 Contributo in Atti di convegno
04.01 Contributo in Atti di convegno
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/307012
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