A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30°C up to 300°C, has been used for thermal sensing. A high sensitivity of 5.13 mV/°C at two constant bias currents has been measured.
Temperature sensor based on 4H-SiC diodes for hostile environments
Nipoti R
2015
Abstract
A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30°C up to 300°C, has been used for thermal sensing. A high sensitivity of 5.13 mV/°C at two constant bias currents has been measured.File in questo prodotto:
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