In this work we have explored the photoluminescence signal emitted by graphene oxide (GO) nanosheets infiltrated in silanized porous silicon (PSi) matrix. A strong enhancement of the PL emitted from GO by a factor of 2.5 with respect to GO on crystalline silicon was successfully demonstrated. In addition, a weak wavelength modulation of GO photoluminescence emission was observed, resulting in very attractive aspect for its exploitation in innovative optoelectronic devices and high sensible fluorescent sensors.

Graphene oxide-based mesoporous silicon as tunable platform for optical applications

Rea I;Sansone L;De Stefano L;Dardano P;Giordano M;Borriello A;Casalino M
2015

Abstract

In this work we have explored the photoluminescence signal emitted by graphene oxide (GO) nanosheets infiltrated in silanized porous silicon (PSi) matrix. A strong enhancement of the PL emitted from GO by a factor of 2.5 with respect to GO on crystalline silicon was successfully demonstrated. In addition, a weak wavelength modulation of GO photoluminescence emission was observed, resulting in very attractive aspect for its exploitation in innovative optoelectronic devices and high sensible fluorescent sensors.
2015
Istituto per la Microelettronica e Microsistemi - IMM
Graphene
Internal photoemission effect
Photodetector
Silicon
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/307817
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