Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state. © 2013 IEEE.
A double-pulse technique for the dynamic I/V characterization of GaN FETs
Filicori F
2014
Abstract
Standard dynamic characterization methods based on periodic narrow-pulse low duty-cycle excitation waveforms provide suboptimal I/V curves when used along with GaN field effect transistors (FETs), due to complex nonlinear charge trapping effects. Thus, a double-pulse technique for the dynamic characterization of GaN FETs is here presented. The double-pulsed I/V characteristics are shown to be not only isothermal but also corresponding to a fixed charge trapping state. © 2013 IEEE.File in questo prodotto:
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