We present the responsivity spectra in the 0.2-0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic calculation of the antenna spectral response suggest that the device may work as ultra-broadband nonlinear terahertz detector.
Coupling of terahertz radiation to two-dimensional plasmons in a resonant cavity via an on-chip integrated cross-dipole antenna
Giovine E;Di Gaspare A;Biasiol G;Sorba L;
2016
Abstract
We present the responsivity spectra in the 0.2-0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic calculation of the antenna spectral response suggest that the device may work as ultra-broadband nonlinear terahertz detector.File in questo prodotto:
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