We present the responsivity spectra in the 0.2-0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic calculation of the antenna spectral response suggest that the device may work as ultra-broadband nonlinear terahertz detector.

Coupling of terahertz radiation to two-dimensional plasmons in a resonant cavity via an on-chip integrated cross-dipole antenna

Giovine E;Di Gaspare A;Biasiol G;Sorba L;
2016

Abstract

We present the responsivity spectra in the 0.2-0.4 THz range at low temperature of a AlGaAs/GaAs field-effect transistor connected to an on-chip integrated antenna. We fabricated asymmetric plasmonic microcavities to obtain down-converted signals from the intrinsic nonlinearity of 2D electron plasma oscillations. Finite-element modeling simulations of the 2D electron oscillations and electromagnetic calculation of the antenna spectral response suggest that the device may work as ultra-broadband nonlinear terahertz detector.
2016
Istituto Officina dei Materiali - IOM -
Istituto Nanoscienze - NANO
cavity
plasmon
terahertz
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.14243/332881
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